A big 3D InCites congratulations to Professor Mitsumasa Koyanagi of Tohoku University’s New Industry Creation Hatchery Center (NICHe) and Dr. Peter Ramm, head of Strategic Projects at Fraunhofer EMFT, who have been named co-recipients of the 2020 IEEE Electronics Packaging Award for “pioneering contributions leading to the commercialization of 3D wafer and die level stacking packaging.” Ramm is also a longtime member of the 3D InCites Advisory Board, and we are honored to have had his guidance over the years.
According to IEEE, Koyanagi and Ramm’s efforts in developing, demonstrating, and commercializing 3D integrated circuit (3DIC) integration processes have played a key role in enabling ever-smaller yet more-powerful devices especially important to mobile communications.
Koyanagi succeeded in fabricating a 3D stacked image sensor, 3D stacked memory, and 3D stacked microprocessor test chips using through-silicon vias (TSVs) for the first time. He also demonstrated a four-layer stacked image sensor with quarter video graphics array resolution, a four-layer stacked multicore processor, and a four-layer stacked heterogeneous image sensor with an extremely high frame rate.
Ramm developed and patented 3D integration approaches with a particular focus on die-to-wafer stacking, using low-temperature bonding and vertical integration of IC devices with TSVs, and demonstrated a complete industrial 3DIC integration process. He also published results on key processes such as 3D metallization including robust IMC interconnections and on advanced sensor applications of 3D heterogeneous integration.
The IEEE Electronics Packaging Award was established in 2002, and recipients are selected for their contributions to the advancement of components, electronic packaging, or manufacturing technologies. Nominees are judged on a wide range of criteria including leadership in the field, breadth of work, inventive value, originality, and benefits to society.
You can read more about Koyanagi and Ramm’s work, as presented at ECTC 2020, here.
